Simulation of Nanoscale InAlAs/InGaAs High Electron Mobility Transistors Based on Drift-Diffusion Model Incorporating an Effective Potential
Simulation of Nanoscale InAlAs/InGaAs High Electron Mobility Transistors Based on Drift-Diffusion Model Incorporating an Effective Potential
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基于包含有效势的漂移扩散模型的纳米级 InAlAs/InGaAs 高电子迁移率晶体管仿真
DOI：
10.1143/jjap.42.4261
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发表时间：
2003
影响因子：
1.5
通讯作者：
E. Sano
中科院分区：
文献类型：
--
作者：
E. Sano
我们应用一种基于漂移扩散(DD)的有效势方法模拟了纳米InAlAs/InGaAs高电子迁移率晶体管(HEMT)的阈值电压特性。模拟得到的阈值电压漂移与测量的阈值电压漂移与纵横比有很好的一致性。模拟结果表明，阈值电压随着InGaAs沟道厚度的减小而增大，这可以用量子阱的量子理论来解释。
We applied an effective potential method to drift-diffusion (DD)-based simulation of the threshold voltage characteristics in nanoscale InAlAs/InGaAs high electron mobility transistors (HEMTs). Good agreement between simulated and measured threshold voltage shifts versus aspect ratio was obtained. Simulations revealed that the threshold voltage increases with decreasing InGaAs channel thickness which can be explained by quantum theory for quantum wells.