Submicrometer Microelectronics Dimensional Metrology: Scanning Electron Microscopy
Submicrometer Microelectronics Dimensional Metrology: Scanning Electron Microscopy
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亚微米微电子学尺寸计量：扫描电子显微镜
DOI：
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发表时间：
1987
影响因子：
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通讯作者：
D. Joy
中科院分区：
文献类型：
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作者：
M. Postek;D. Joy
越来越多的集成到亚微米区域的VHSIC和VLSI应用的微电子需要检查这些结构的线宽测量和缺陷检测系统以外的光学显微镜。低束流电压扫描电子显微镜最近已在这项工作中，由于其潜在的高空间分辨率和大景深。本文根据现有仪器的技术指标和性能，讨论了扫描电子显微镜在微电子检测和计量中的应用，并将扫描电子显微镜与亚微米加工所需的控制联系起来。
The increasing integration of microelectronics into the submicrometer region for VHSIC and VLSI applications necessitates the examination of these structures both for linewidth measurement and defect inspection by systems other than the optical microscope. The low beam-voltage scanning electron microscope has been recently employed in this work due to its potentially high spatial resolution and large depth of field. This paper discusses applications of the scanning electron microscope to microelectronics inspection and metrology in light of the present instrument specifications and capabilities, and relates the scanning electron microscope to the controls required for submicrometer processing.