Boron diffusion in compressively stressed float zone-silicon induced by Si3N4 films
Boron diffusion in compressively stressed float zone-silicon induced by Si3N4 films
复制标题
Si3N4 薄膜引起的压应力浮区硅中的硼扩散
DOI：
10.1149/1.1838244
复制
发表时间：
1998
影响因子：
3.9
通讯作者：
E. Arai
中科院分区：
文献类型：
--
作者：
Y. Zaitsu;T. Shimizu;J. Takeuchi;S. Matsumoto;M. Yoshida;T. Abe;E. Arai
研究了si3n4薄膜退火过程中应力对硼在浮子区-硅中的扩散的影响，阐明了衬底中空位浓度与压应变之间的关系。从Si - 3n - 4薄膜厚度和退火温度对基底中硼扩散率和应力的依赖结果来看，Si - 3n - 4薄膜退火过程中硼的扩散被延缓，基底具有高应力和弹性压缩应变。这些结果表明，弹性压缩应变产生了多余的空位，导致硼的间质扩散阻滞。
The effect of stress during annealing induced by Si 3 N 4 films on boron diffusion in float zone-silicon has been studied and a correlation between vacancy concentration and compressive strain in the substrate has been clarified. From the results of Si 3 N 4 film thickness and annealing temperature dependence on both boron diffusivity and stress in the substrates, boron diffusion was found to be retarded and the substrate was found to have high stress, having elastic compressive strain during annealing under Si 3 N 4 films. These results indicate that excess vacancies are generated by elastic compressive strain, causing the retardation of interstitial-mediated diffusion of boron.