Hardness and structure of a-CNx films synthesized by chemical vapor deposition
Hardness and structure of a-CNx films synthesized by chemical vapor deposition
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DOI:
10.1143/jjap.39.4148
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发表时间:
2000-07-01
期刊:
影响因子:
--
通讯作者:
Saitoh, H
中科院分区:
文献类型:
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作者:
Tanaka, D;Ohkawara, Y;Saitoh, H
Mechanically hard a-CNx films were synthesized using a combination of ion bombardment and the chemical vapor deposition process using the dissociative excitation reaction of BrCN with Ar metastable atoms. Nanoindentation tests disclosed that the indentation hardness, Young's modulus and elastic recovery increased with increasing ion-accelerating voltage. Moreover, the degree of flow among clusters decreased in the ion-bombarded sample. The D (disordered)-band absorption on an infrared absorption spectrum was replaced by a C-N absorption assigned to the tertiary aromatic amine. These results suggest that the internal and external structures of the carbon nitride cluster change from the two-dimensional order to the three-dimensional order of C-N. The structure of hard a-CNx is clearly distinguishable from nitrogen-containing diamond-like carbon.