Characterization and modeling of high-voltage field-stop IGBTs

Characterization and modeling of high-voltage field-stop IGBTs
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DOI：
10.1109/tia.2003.814547
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发表时间：
2002-12
期刊：
Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344)
影响因子：
--
通讯作者：
X. Kang;A. Caiafa;E. Santi;J. Hudgins;P. Palmer
X. Kang;A. Caiafa;E. Santi;J. Hudgins;P. Palmer
中科院分区：
其他
文献类型：
--
作者：
X. Kang;A. Caiafa;E. Santi;J. Hudgins;P. Palmer

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The HVFS (high voltage field stop) IGBT is becoming a promising power device in high power application with the robust characteristics offered by the field stop technology, which combines the inherent advantages offered by PT (punch-through) and NPT (nonpunch-through) structures while overcoming the drawbacks of each structure. In this work an electrothermal physics-based model for the field stop IGBT is developed and validated using experimental results for a commercial 1200 V/60 A field stop IGBT over the entire temperature range specified in the data sheets. The validated model is then used to simulate a 6.5 kV field stop IGBT. The simulation results are compared with experimental results published in the literature and good agreement is obtained.