An SCR-Incorporated BJT Device for Robust ESD Protection With High Latchup Immunity in High-Voltage Technology
An SCR-Incorporated BJT Device for Robust ESD Protection With High Latchup Immunity in High-Voltage Technology
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DOI：
10.1109/tdmr.2011.2170839
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发表时间：
2012-03
影响因子：
2
通讯作者：
Chih-Yao Huang;F. Chiu;Quo-Ker Chen;Ming-Fang Lai;J. Tseng
中科院分区：
文献类型：
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作者：
Chih-Yao Huang;F. Chiu;Quo-Ker Chen;Ming-Fang Lai;J. Tseng
开发了一种采用硅控整流器 (SCR) 的高保持电压 BJT，用于 0.6 μm 高压 10 V 工艺中的静电放电 (ESD) 保护。该器件仅由合并在寄生 NPN BJT 中的浮动 P+ 扩散组成。通过 NPN-N+ 集电极到浮动 P+ 扩散间距和浮动 P+ 扩散宽度的布局优化，可以实现稳健的 6-7 kV ESD 阈值和 15-18 V 的高抗闩锁保持电压。可以等效地视为并联PNPN SCR部件和NPN BJT部件的并联。合并的 SCR 部分进一步由寄生 SCR 与由浮动 P+ 区域和 N 阱形成的反向偏置 PN 二极管串联组成。进一步分析表明，浮动P+扩散是该SCR合并BJT的关键部分。寄生反向偏置 PN 二极管维持大部分高保持电压。寄生 NPN BJT 在 ESD 电流传导中起主要作用，而与反向偏置 PN 二极管串联的 SCR 是次级传导路径。
A silicon-controlled rectifier (SCR)-incorporated BJT with high holding voltage is developed for electrostatic discharge (ESD) protection in a 0.6 μm high-voltage 10 V process. This device consists simply of a floating P+ diffusion incorporated in a parasitic NPN BJT. A robust 6-7 kV ESD threshold and high-latchup-immune holding voltage of 15-18 V can be achieved by layout optimization of the NPN-N+ -collector to floating P+ -diffusion spacing and the floating P+ diffusion width. It can be equivalently regarded as parallel connection of an incorporated PNPN SCR part and an NPN BJT part. The incorporated SCR part is further composed of a parasitic SCR in series with a reverse-biased PN diode formed by the floating P+ region and N-well. The further analysis shows that the floating P+ diffusion is the key part of this SCR-incorporated BJT. The parasitic reverse-biased PN diode sustains most of the high holding voltage. The parasitic NPN BJT plays a major role in ESD current conduction, while the incorporated SCR in series with the reverse-biased PN diode is the secondary conduction path.