Electric-field-enhanced electron capture coefficient of EL2 level in semi-insulating GaAs
Electric-field-enhanced electron capture coefficient of EL2 level in semi-insulating GaAs
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DOI：
10.1063/1.1844040
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发表时间：
2005-01
影响因子：
4
通讯作者：
M. Kiyama;M. Tatsumi;M. Yamada
中科院分区：
文献类型：
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作者：
M. Kiyama;M. Tatsumi;M. Yamada
通过对半绝缘GaAs中电子捕获系数与EL2给体能级的亚线性J-E特性的分析，定量地确定了低频电流振荡开始前1150V / cm的电子捕获系数对电场的依赖关系。采用三探针保护环法获得精确的J-E特性。考虑稳态下捕获和发射过程的速率方程，推导出捕获系数与电场依赖关系的简化公式。我们的结果与多声子发射捕获模型的计算结果吻合得很好。
The electric-field dependence of electron capture coefficient to EL2 donor level in semi-insulating GaAs has been quantitatively determined from the analysis of the sublinear J–E characteristics up to 1150V∕cm before the onset of the low-frequency current oscillation. The three-probe guard-ring method was employed to obtain precise J–E characteristics. By considering the rate equation of the capture and emission process in the steady state, a simplified formula was derived to determine the electric-field dependence of capture coefficient. Our results agree well with those calculated from the multiphonon emission capture model.