T.Irisawa: "Delta-Doping and the Possibility of Wirelike Incorporation of Si on GaAs Vicinal Surfaces and in Metalorganic Vapor Phase Epitaxial Growth"Japanese Journal of Applied Physics Part 1. 37. 1514-1517 (1998)
T.Irisawa: "Delta-Doping and the Possibility of Wirelike Incorporation of Si on GaAs Vicinal Surfaces and in Metalorganic Vapor Phase Epitaxial Growth"Japanese Journal of Applied Physics Part 1. 37. 1514-1517 (1998)
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T.Irisawa：“Delta-Doping and the Possibility of Wirelike Incorporation of Si on GaAs Vicinal Surfaces and in Metalorganic Vapor Phase Epitcentric Growth”日本应用物理杂志第 1. 37. 1514-1517 (1998)
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