Enhancement of Saturation Boiling of PF-5060 on Microporous Copper Dendrite Surfaces
Enhancement of Saturation Boiling of PF-5060 on Microporous Copper Dendrite Surfaces
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DOI：
10.1115/1.4000975
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发表时间：
2010-07
影响因子：
--
通讯作者：
M. El-Genk;Amir Ali
中科院分区：
文献类型：
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作者：
M. El-Genk;Amir Ali
实验研究了PF-5060介电液在10 × 10 mm 2铜基片上沉积的微孔铜枝晶表面层上的饱和沸腾。电化学沉积的表面层具有不同的厚度（145.6 μm、46.3 μm和33.1 μm）。最厚的层给出最好的结果：饱和CHF为25.27W/cm 2，出现在仅为2.9K的表面温度下，最大核沸腾传热系数hMNB在充分发展的核沸腾区的末端附近为8.76W/cm 2 K。此外，核态沸腾在略高于饱和温度（<0.5 K）的表面温度下发生，没有温度漂移。在46.3 μm和33.1 μm厚的Cu纳米枝晶表面层上开始沸腾之前的温度偏移很小（3.7 K和6 K），分别对应于大约55.1°C和57.4°C的表面温度。这些温度远低于大多数硅电子器件和中央处理器单元可靠运行的推荐温度（85°C）。
Experiments are performed to investigate saturation boiling of degassed PF-5060 dielectric liquid on microporous copper dendrite surface layers deposited on 10 × 10 mm 2 Cu substrates. The electrochemically deposited surface layers are of different thicknesses (145.6 μm, 46.3 μm, and 33.1 μm). The thickest layer gives the best results: the saturation CHF of 25.27 W/cm 2 occurs at a surface superheat of only 2.9 K and the maximum nucleate boiling heat transfer coefficient, h MNB , near the end of the fully developed nucleate boiling region, is 8.76 W/cm 2 K. In addition, nucleate boiling ensues at a surface temperature slightly above saturation (<0.5 K), with no temperature excursion. The temperature excursions before initiating boiling on the 46.3 μm and 33.1 μm thick Cu nanodendrite surface layers are small (3.7 K and 6 K), corresponding to surface temperatures of ∼55.1°C and 57.4°C, respectively. These temperatures are much lower than recommended (85°C) for reliable operation of most silicon electronics and central processor units.