Hexagonal boron nitride grown by MOVPE
Hexagonal boron nitride grown by MOVPE
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DOI：
10.1016/j.jcrysgro.2008.07.057
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发表时间：
2008-11-15
影响因子：
1.8
通讯作者：
Makimoto, T.
中科院分区：
文献类型：
--
作者：
Kobayashi, Y.;Akasaka, T.;Makimoto, T.
六方氮化硼（h-BN）在深紫外波段具有潜在的光学器件应用价值。几十年来，只有无定形和乱层氮化硼（BN）薄膜已被化学气相沉积和金属有机气相外延生长。通过引入流速调制外延（FME），这使我们能够减少寄生反应和降低最佳生长温度，我们已经成功地在近晶格匹配的（111）Ni衬底上生长单相h-BN外延膜。在室温下的阴极发光中，h-BN外延膜在227 nm处具有近带隙的紫外发光。FME和晶格匹配衬底的结合为高质量h-BN的外延生长铺平了道路。(C)2008 Elsevier B. V.保留所有权利。
Hexagonal boron nitride (h-BN) has a potential for optical device applications in the deep ultraviolet spectral region. For several decades, only amorphous and turbostratic boron nitride (BN) films had been grown by chemical vapor deposition and metalorganic vapor phase epitaxy. By introducing flow-rate modulation epitaxy (FME), which enables us to reduce parasitic reactions and lower the optimal growth temperature, we have succeeded in growing single-phase h-BN epitaxial films on nearly lattice-matched (1 1 1) Ni substrates. The h-BN epitaxial films exhibit near-band-gap ultraviolet luminescence at a wavelength of 227 nm in cathodoluminescence at room temperature. The combination of FME and the lattice-matched substrate paves the way for the epitaxial growth of high-quality h-BN. (C) 2008 Elsevier B.V. All rights reserved.