An ohmic nanocontact to GaAs
An ohmic nanocontact to GaAs
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GaAs 的欧姆纳米接触
DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
R. Reifenberger
中科院分区：
文献类型：
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作者：
Takhee Lee;Jia Liu;D. Janes;V. Kolagunta;J. Dicke;R. P. Andres;J. Lauterbach;M. Melloch;D. Mcinturff;J. Woodall;R. Reifenberger
描述了与n型GaAs衬底的纳米尺寸欧姆接触的形成和表征。在单晶纳米尺寸的Au簇和覆盖有低温生长GaAs（LTG：GaAs）层的GaAs结构之间形成纳米接触。二甲苯基二硫醇（对二甲苯-α，α′-二硫醇; C8 H10 S2）的有机单层提供Au簇与LTG：GaAs表面的机械和电子束缚。Au团簇/二甲苯基二硫醇/GaAs的I（V）数据显示出欧姆接触行为，在分布在表面上的各种团簇之间具有良好的重复性。比接触电阻测定为1×10−6 Ω cm 2。 已观察到大于1×106 A/cm ~ 2的电流密度。
The formation and characterization of nanometer-size, ohmic contacts to n-type GaAs substrates are described. The nanocontacts are formed between a single-crystalline, nanometer-size Au cluster and a GaAs structure capped with layer of low-temperature-grown GaAs (LTG:GaAs). An organic monolayer of xylyl dithiol (p-xylene-α,α′- dithiol; C8H10S2) provides mechanical and electronic tethering of the Au cluster to the LTG:GaAs surface. The I(V) data of the Au cluster/xylyl dithiol/GaAs show ohmic contact behavior with good repeatability between various clusters distributed across the surface. The specific contact resistance is determined to be 1×10−6 Ω cm2. Current densities above 1×106 A/cm2 have been observed.