Analog resistive switching behavior of Al/Nb2O5/Al device
Analog resistive switching behavior of Al/Nb2O5/Al device
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DOI：
10.1088/0268-1242/29/10/104002
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发表时间：
2014-10-01
影响因子：
1.9
通讯作者：
Mikolajick, T.
中科院分区：
文献类型：
--
作者：
Maehne, H.;Wylezich, H.;Mikolajick, T.
金属-绝缘体-金属（MIM）结构中的电阻开关效应受到电极材料的强烈影响。本文将无铂对称Al/Nb2O5/Al器件与具有铂底电极的器件进行了比较。对于底部电极为铂的器件，在高达125℃的温度下，可以观察到良好的数据保留率。对于Al/Nb2O5/Al器件，可以观察到面积依赖的纯电子基电阻开关。底部电极界面的电子捕获负责观察到的模拟开关行为，这使得Al/Nb2O5/Al器件适合神经形态应用。
Resistive switching effects in metal-insulator-metal (MIM) structures are strongly influenced by the electrode materials. In this work a platinum-free symmetric Al/Nb2O5/Al device is compared to a device with platinum bottom electrode. For the device with the platinum bottom electrode, filamentary based resistive switching with good data retention was observed up to 125 degrees C. For the Al/Nb2O5/Al device, an area dependent pure electronic based resistive switching was observed. Electron trapping at the bottom electrode interface is responsible for the observed analog switching behavior which makes an Al/Nb2O5/Al device suitable for neuromorphic applications.