Field Effect Control of Tc in Y-Ba-Cu-O Electric Double Layer Transistors
Field Effect Control of Tc in Y-Ba-Cu-O Electric Double Layer Transistors
复制标题
Y-Ba-Cu-O双电层晶体管中Tc的场效应控制
DOI：
10.1109/tasc.2014.2371694
复制
发表时间：
2015
期刊：
影响因子：
--
通讯作者：
Kaname Matsumoto
中科院分区：
文献类型：
--
作者：
Tomoya Horid;Takeshi Matsufuji;Kaname Matsumoto
采用10.5-12.9 nm厚的YBa 2Cu 3 O 7（YBCO）薄膜和N，N-二乙基-N-甲基-N-（2-甲氧基乙基）铵双（三氟甲磺酰基）酰亚胺（DEME-TFSI）制备了双电层场效应晶体管（EDLFET），并对器件的临界温度（Tc）和涡旋特性进行了研究。当施加负栅极电压（VG）时，观察到薄层电阻的减小和Tc的增加，并且在正栅极电压的情况下观察到相反的变化。在VG= 0 V时，Tconset约为70 K，Tc 0约为47 K。VG= -5 V时，Tconset为83.3 K，Tc 0为61.8 K; VG= +2 V时，Tconset为65.0 K，Tc 0为40.0 K。为了探讨载流子掺杂机理，测量了VG= 0 V和-3 V时的涡旋运动激活能和不可逆温度。负栅压提高了激活能和不可逆温度。这表明载流子掺杂是在整个膜厚上进行的，因为涡旋以大于相干长度的长度尺度移动。这表明，电化学反应，如氧离子注入强烈影响本装置中的载流子密度。
Electric-double-layer field-effect-transistors (EDLFETs) were fabricated using 10.5-12.9 nm thick YBa2Cu3O7(YBCO) films and N, N-Diethyl-Nmethyl-N-(2-methoxyethyl) ammonium bis (trifluoromethanesulfonyl) imide (DEME-TFSI), and critical temperature (Tc) and vortex behavior were evaluated in the devices. Decrease in sheet resistance and increase in Tc were observed when negative gate voltage (VG) was applied, and opposite variation was observed in the case of positive gate voltage. At VG= 0 V, Tconsetwas ~70 K, and Tc0was ~47 K. VG= -5 V resulted in Tconsetof 83.3 K and Tc0of 61.8 K, and those in VG= +2 V were 65.0 K and 40.0 K. To discuss carrier doping mechanism, activation energy for vortex motion and irreversibility temperature were measured at VG= 0 V and -3 V. Activation energy and irreversibility temperature were improved by negative gate voltage. This shows that carrier doping was performed throughout thickness of film since vortices moved with length scale larger than coherence length. This suggests that electrochemical reaction such as oxygen ion injection strongly affected carrier density in the present devices.