Resist Removal by using Atomic Hydrogen
Resist Removal by using Atomic Hydrogen
复制标题
使用原子氢去除抗蚀剂
DOI：
10.2494/photopolymer.21.293
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发表时间：
2008
影响因子：
0.8
通讯作者：
S. Tagawa
中科院分区：
文献类型：
--
作者：
H. Horibe;Masashi Yamamoto;E. Kusano;T. Ichikawa;S. Tagawa
对利用钨（W）催化剂产生的原子氢的抗蚀剂去除技术进行了评价。该去除方法是不使用化学品的干法，因此预计可以减少环境负担和成本。通过提高W电流和基板温度来提高抗蚀剂去除率。在电流30A（W催化剂2000℃）、基板温度230℃下，正型酚醛清漆光刻胶的去除速率超过1μm/min。用作较短波长抗蚀剂的聚乙烯苯酚（PVP）和聚甲基丙烯酸甲酯（PMMA）以及正型酚醛清漆抗蚀剂都能够被去除。在这三种聚合物中，PMMA 去除速度大约是其他聚合物的三倍。认为去除率高的聚合物不含苯环，是主链断裂型聚合物。
Resist removal technology by using atomic hydrogen generated by tungsten (W) catalyzer was evaluated. This removal method is the dry process which does not use chemicals, so it was expected that the environmental burden and the cost can decrease. The resist removal rate has increased by raising W current and the substrate temperature. The removal rate of the positive type of novolak resist was over 1 μm/min at the current of 30A (W catalyzer was 2000°C) and at the substrate temperature of 230°:C. Polyvinyl phenol (PVP) and poly methylmethacrylate (PMMA) which were used as the shorter wavelength resist were able to be removed as well as the positive type of novolak resist. In these three polymers, PMMA removal rate was about three times as fast as those of others. It is thought that polymer with high removal rate has no benzene ring and is main chain scission type polymer.