Thermoelectric properties of Te-doped ternary CuAgSe compounds
Thermoelectric properties of Te-doped ternary CuAgSe compounds
复制标题
Te掺杂三元CuAgSe化合物的热电性能
DOI:
10.1039/c5ta06780d
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发表时间:
2015-11
影响因子:
11.9
通讯作者:
Lidong Chen
中科院分区:
文献类型:
--
作者:
Pengfei Qiu;Xiaobei Wang;Tiansong Zhang;Xun Shi;Lidong Chen
The ternary selenide CuAgSe shows great potential as a new promising thermoelectric material due to its superior carrier mobility and low lattice thermal conductivity. In this study, we doped Te at Se-sites and systematically studied the effect of Te-doping on the thermoelectric properties of the low-temperature CuAgSe phase (β-CuAgSe). It is found that the Te doping limit in β-CuAgSe is around 0.15. The longitudinal resistivity and Hall resistivity measurements under a magnetic field suggest that Te-doping exerts little effect on the band structure and the low-mobility carriers (holes) contribute weakly to the electrical transport in all Te-doped samples. Thus, the p–n transition and accompanying abrupt Seebeck coefficient decrease at elevated temperatures, which are quite common in non-stoichiometric β-CuAgSe samples, were not observed in Te-doped samples. Although the electrical conductivity of Te-doped samples is reduced due to the decreased carrier concentration and mobility, the significantly decreased thermal conductivity ensures that the Te-doped samples still maintain a similar or slightly higher thermoelectric figure of merit (zT) as compared with that of the stoichiometric β-CuAgSe. The maximum zT around 0.7 at 450 K is obtained in CuAgSe0.95Te0.05.
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影响因子:
41.2
作者:
Liu, Huili;Shi, Xun;Snyder, G. Jeffrey
通讯作者:
Snyder, G. Jeffrey
DOI:
10.1140/epjb/e2006-00253-3
发表时间:
2006-06
期刊:
The European Physical Journal B - Condensed Matter and Complex Systems
影响因子:
--
作者:
D. Trots;A. Skomorokhov;M. Knapp;H. Fuess,
通讯作者:
D. Trots;A. Skomorokhov;M. Knapp;H. Fuess,
影响因子:
8.6
作者:
Morelli, D. T.;Jovovic, V.;Heremans, J. P.
通讯作者:
Heremans, J. P.
影响因子:
3.7
作者:
J. Cho;Xun Shi;J. Salvador;G. Meisner;Jihui Yang;Hsin Wang;A. Wereszczak;Xiaoyuan Zhou;C. U
通讯作者:
J. Cho;Xun Shi;J. Salvador;G. Meisner;Jihui Yang;Hsin Wang;A. Wereszczak;Xiaoyuan Zhou;C. U
影响因子:
9.4
作者:
Hyoungchul Kim;S. Ballikaya;H. Chi;J. Ahn;Kiyong Ahn;C. Uher;M. Kaviany
通讯作者:
Hyoungchul Kim;S. Ballikaya;H. Chi;J. Ahn;Kiyong Ahn;C. Uher;M. Kaviany