Thermoelectric properties of Te-doped ternary CuAgSe compounds

Thermoelectric properties of Te-doped ternary CuAgSe compounds
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Te掺杂三元CuAgSe化合物的热电性能

DOI:
10.1039/c5ta06780d
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发表时间:
2015-11
影响因子:
11.9
通讯作者:
Lidong Chen
Lidong Chen
中科院分区:
材料科学2区
文献类型:
--
作者:
Pengfei Qiu;Xiaobei Wang;Tiansong Zhang;Xun Shi;Lidong Chen

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三元硒系化合物CuAgSe具有优异的载流子迁移率和较低的晶格热导率,是一种极具潜力的新型热电材料。在本研究中,我们在Se位掺杂Te,系统地研究了Te掺杂对低温CuAgSe相(β-CuAgSe)热电性能的影响。结果表明,β-CuAgSe的Te掺杂下限约为0.15。纵向电阻率和磁场下的霍尔电阻率测量表明,Te掺杂对样品的能带结构影响不大,低迁移率载流子(空穴)对电输运的贡献很小。因此,在非化学计量比的β-CuAgSe样品中,未观察到Te掺杂样品中常见的p-n转变和伴随的塞贝克系数在高温下的突然减小。尽管Te掺杂样品的电导率由于载流子浓度和迁移率的降低而降低,但显著降低的热导率确保了Te掺杂样品仍然保持与化学计量比β-CuAgSe样品相似或略高的热电优值系数(ZT)。在450K时,CuAgSe0.95Te0.05的ZT达到最大值,约为0.7。
The ternary selenide CuAgSe shows great potential as a new promising thermoelectric material due to its superior carrier mobility and low lattice thermal conductivity. In this study, we doped Te at Se-sites and systematically studied the effect of Te-doping on the thermoelectric properties of the low-temperature CuAgSe phase (β-CuAgSe). It is found that the Te doping limit in β-CuAgSe is around 0.15. The longitudinal resistivity and Hall resistivity measurements under a magnetic field suggest that Te-doping exerts little effect on the band structure and the low-mobility carriers (holes) contribute weakly to the electrical transport in all Te-doped samples. Thus, the p–n transition and accompanying abrupt Seebeck coefficient decrease at elevated temperatures, which are quite common in non-stoichiometric β-CuAgSe samples, were not observed in Te-doped samples. Although the electrical conductivity of Te-doped samples is reduced due to the decreased carrier concentration and mobility, the significantly decreased thermal conductivity ensures that the Te-doped samples still maintain a similar or slightly higher thermoelectric figure of merit (zT) as compared with that of the stoichiometric β-CuAgSe. The maximum zT around 0.7 at 450 K is obtained in CuAgSe0.95Te0.05.
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