Photovoltaic modulation of ferromagnetism within a FM metal/P-N junction Si heterostructure.
Photovoltaic modulation of ferromagnetism within a FM metal/P-N junction Si heterostructure.
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FM金属/P-N结Si异质结内铁磁性的光伏调制。
DOI：
10.1039/d0nr07911a
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发表时间：
2020-12
期刊：
影响因子：
6.7
通讯作者：
Yifan Zhao;Shishun Zhao;Lei Wang;Shiping Wang;Yujing Du;Yanan Zhao;Shengye Jin;T. Min;
中科院分区：
文献类型：
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作者：
Yifan Zhao;Shishun Zhao;Lei Wang;Shiping Wang;Yujing Du;Yanan Zhao;Shengye Jin;T. Min;
获得小型、快速且节能的自旋电子器件需要一种有效操纵自旋态的新方法。在这里，提出了一种具有 p-n 结硅晶片的原型光伏自旋电子器件，它产生光生电子并通过界面电荷掺杂改变铁磁性。 Co 和 CoFeB 薄膜在阳光照射下分别实现了 48.965 mT 和 11.306 mT 的铁磁共振场变化。瞬态反射（TR）分析和第一原理计算揭示了掺杂到磁性层中的光伏电子并相应地改变了其费米能级。这一发现提供了一种新的磁调制方法，并展示了一种具有丰富能源供应的太阳能驱动的自旋电子器件，这可能会进一步拓展自旋电子学的研究领域。
Obtaining small, fast, and energy-efficient spintronic devices requires a new way of manipulating spin states in an effective manner. Here, a prototype photovoltaic spintronic device with a p-n junction Si wafer is proposed which generates photo-induced electrons and changes the ferromagnetism by interfacial charge doping. A ferromagnetic resonance field change of 48.965 mT and 11.306 mT is achieved in Co and CoFeB thin films under sunlight illumination, respectively. The transient reflection (TR) analysis and the first principles calculation reveal the photovoltaic electrons that are doped into the magnetic layer and alter its Fermi level, correspondingly. This finding provides a new method of magnetism modulation and demonstrates a solar-driven spintronic device with abundant energy supply, which may further expand the landscape of spintronics research.