Spontaneous transition in preferred orientation of GaN domains grown on r-plane sapphire substrate from [112¯0] to [0001]
Spontaneous transition in preferred orientation of GaN domains grown on r-plane sapphire substrate from [112¯0] to [0001]
复制标题
r 面蓝宝石衬底上生长的 GaN 域的择优取向自发跃迁从 [112´0] 到 [0001]
DOI：
10.1063/1.3097009
复制
发表时间：
2009
影响因子：
4
通讯作者：
Jiho Chang
中科院分区：
文献类型：
--
作者：
Hyun;J. Ha;T. Goto;T. Yao;Chinkyo Kim;Soon;Jiho Chang
用不同厚度的氢化物气相外延在蓝宝石(101‘2)(r面)衬底上分别在550 °C和1040 °C下生长了GaN薄膜。随着低温生长GaN层厚度的增加，在1040 °C生长的GaN的择优取向从[112‘0]变为[0001]。详细的原子模型表明，这种择优取向的自发转变是由于反转磁区边界和层错的形成。这一结果具有重要的意义，即根据择优取向的可控性来定制薄膜特性可能与衬底取向无关。
GaN films were grown at 550 °C and subsequently at 1040 °C on sapphire (101¯2) (r-plane) substrates by using hydride vapor phase epitaxy with different layer thicknesses. As the thickness of a low-temperature-grown GaN layer was increased, a preferred orientation of GaN grown at 1040 °C changed from [112¯0] to [0001]. A detailed atomistic model reveals that this spontaneous transition in preferred orientation is due to the formation of inversion domain boundaries and stacking faults. This result has a significant implication that tailoring film characteristics in terms of controllability of preferred orientation may be possible independent of substrate orientation.