Investigations on Raman and X-ray photoemission scattering patterns of vanadium-doped SrBi4Ti4O15 ferroelectric ceramics
Investigations on Raman and X-ray photoemission scattering patterns of vanadium-doped SrBi4Ti4O15 ferroelectric ceramics
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DOI：
10.1016/j.physleta.2006.10.031
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发表时间：
2007-03
影响因子：
2.6
通讯作者：
Jun Zhu;Xiao-bing Chen;Jun-hui He;J. Shen
中科院分区：
文献类型：
--
作者：
Jun Zhu;Xiao-bing Chen;Jun-hui He;J. Shen
在SrBi3{sub4}Ti{sub4}O{sub15}中掺入钒可以改善材料的电性能。拉曼散射表明，V的加入导致了结构、电荷和内应力的局域无序。掺V后，铋和钛的化学价态没有增加。电学性能的改善源于氧空位的抑制、缺陷迁移率的减弱以及A位产生的空位。
Vanadium incorporation in SrBi{sub 4}Ti{sub 4}O{sub 15} results in an improvement of electric properties. Raman scattering reveals that V-addition brings about the local disorders of structure, charge, and internal stress. The chemical valence of Bi and Ti does not increase after V-doping. The electric property improvement is originated from the restraint of oxygen vacancies, mobility weakening of the defects, and the vacancies produced at A-site.