A Temporary Barrier Effect of the Alloy Layer During Selenization: Tailoring the Thickness of MoSe2 for Efficient Cu2ZnSnSe4 Solar Cells
A Temporary Barrier Effect of the Alloy Layer During Selenization: Tailoring the Thickness of MoSe2 for Efficient Cu2ZnSnSe4 Solar Cells
复制标题
硒化过程中合金层的临时势垒效应：为高效 Cu2ZnSnSe4 太阳能电池定制 MoSe2 的厚度
DOI：
10.1002/aenm.201402178
复制
发表时间：
2015-05-06
影响因子：
27.8
通讯作者：
Sun, Yun
中科院分区：
文献类型：
--
作者：
Li, Jianjun;Zhang, Yi;Sun, Yun
采用溅射沉积和后退火方法研究了预合金化工艺对MoSe2形成的影响，从而对Cu2ZnSnSe4（CZTSe）太阳能电池的性能的影响。致密的合金层，这是由一个低温预合金化过程中，作为一个临时的硒扩散障碍，在随后的高温硒化过程。通过这种临时阻挡层可以有效地抑制厚界面MoSe 2的形成，并与随后的致密CZTSe层的快速形成相配合。CZTSe太阳能电池中界面MoSe 2层的厚度可以通过调整硒化过程中的预退火工艺来定制。结果，CZTSe太阳能电池的串联电阻降低到低水平（类似于0.6 Ω cm（2）），并且CZTSe太阳能电池的性能显著提高。制作了转换效率为8.7%的CZTSe太阳电池。
The influence of a prealloying process on the formation of MoSe2 and thus on the performance of Cu2ZnSnSe4 (CZTSe) solar cells is investigated using sputtering deposition and post-annealing approaches. The dense alloy layer, which is made by a low-temperature prealloying process, acts as a temporary Se diffusion barrier during a subsequent high-temperature selenization process. The formation of thick interfacial MoSe2 can be suppressed effectively by this temporary barrier, cooperating with subsequent quick formation of compact CZTSe layer. The thickness of interfacial MoSe2 layer in CZTSe solar cells can be tailored by adjusting the preannealing process during selenization. As a consequence, the series resistance of CZTSe solar cells is reduced to a low level (similar to 0.6 Omega cm(2)), and the performance of CZTSe solar cells is improved significantly. A CZTSe solar cell with efficiency of 8.7% is fabricated.