Electrical Properties of Ti/Al Ohmic Contacts to Sulfur-Passivated N-Face n-Type GaN for Vertical-Structure Light-Emitting Diodes
Electrical Properties of Ti/Al Ohmic Contacts to Sulfur-Passivated N-Face n-Type GaN for Vertical-Structure Light-Emitting Diodes
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DOI：
10.1149/1.3126529
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发表时间：
2009-07
影响因子：
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通讯作者：
S. Jung;T. Seong;Hyunsoo Kim;K. Park;J. Park;G. Namgoong
中科院分区：
文献类型：
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作者：
S. Jung;T. Seong;Hyunsoo Kim;K. Park;J. Park;G. Namgoong
研究了用分子束外延生长的（NH 4）2Sx钝化的N面n-GaN：Si（4.2 × 1018 cm-3）上Ti/Al欧姆接触的电学特性。结果表明，钝化的结果在n-GaN的光致发光强度的增加。电流-电压（I-V）测量显示，在300°C下退火后，钝化样品的电气性能略有下降，而未处理的样品显示出一些改善，但仍然是非欧姆的。基于I-V和X射线光电子能谱的结果，我们描述了钝化和退火的Ti/Al接触的N面n-GaN的电性能的依赖性的可能机制。
We investigate the electrical properties of Ti/Al ohmic contacts on (NH 4 ) 2 S x -passivated N-face n-GaN:Si (4.2 X 10 18 cm ―3 ) grown by molecular beam epitaxy. It is shown that the passivation results in an increase in the photoluminescence intensity of n-GaN. Current―voltage (I-V) measurements show that the passivated samples experience a slight degradation in the electrical properties upon annealing at 300°C, while the untreated samples show some improvement although still nonohmic. Based on the I-V and X-ray photoemission spectroscopy results, we describe the possible mechanisms for the passivation and annealing dependence of the electrical properties of the Ti/Al contacts to the N-face n-GaN.