Picosecond hot electron light emission from submicron complementary metal–oxide–semiconductor circuits
Picosecond hot electron light emission from submicron complementary metal–oxide–semiconductor circuits
复制标题
亚微米互补金属氧化物半导体电路的皮秒热电子光发射
DOI：
10.1063/1.118305
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发表时间：
1997
影响因子：
4
通讯作者：
J. Kash
中科院分区：
文献类型：
--
作者：
J. Tsang;J. Kash
由时间宽度小于270 ps的脉冲组成的光发射已经从使用亚微米互补金属氧化物半导体（CMOS）逻辑门制造的全功能硅集成电路中检测到。发射是在正常偏置条件下观察到的，并发生在栅极切换时。发射来自于开关期间晶体管中存在的瞬态电流脉冲所产生的热电子群。发射的速度和光谱特性表明，未来的应用在高速CMOS电路的定时测量。
Optical emission consisting of pulses with temporal widths of less than 270 ps has been detected from fully functional silicon integrated circuits fabricated using submicron complementary metal– oxide–semiconductor (CMOS) logic gates. Emission is observed under normal bias conditions and occurs when the gates are switching. The emission arises from the hot electron populations created by the transient current pulses present in the transistors during switching. The speed and spectral characteristics of the emission suggest future applications in the measurement of timing in high speed CMOS circuits.