Extrinsic electron traps in tris(8-hydroxyquinoline) aluminium
Extrinsic electron traps in tris(8-hydroxyquinoline) aluminium
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DOI：
10.1143/jjap.41.l1122
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发表时间：
2002-10-01
期刊：
影响因子：
--
通讯作者：
So, SK
中科院分区：
文献类型：
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作者：
Fong, H;Lun, K;So, SK
用光学飞行时间(TOF)技术测量了三(8-羟基喹啉)铝(AlQ(3))在不同气体中的电子迁移率。当新鲜制备的Alq3样品暴露在空气中时，观察到TOF信号VAS高度分散。样品在370K热处理12h后，信号变得不弥散。在250-380K温度范围内，电子迁移率的场依赖关系表现为Poole-Frenkel形式。考察了不同环境气体(N-2、O-2、H2O)对电子迁移率的影响。研究发现，O-2在AlQ(3)中起到了非本征掺杂的作用，并诱导了电子陷阱。
Optical time-of-flight (TOF) technique was used to measure the electron mobility of tris(8-hydroxyquinoline) aluminium (Alq(3)) exposed to different gases. When freshly prepared Alq3 sample was exposed to air, the TOF signal vas observed to be highly dispersive. After annealing the sample to 370 K for 12 h, the signal became non-dispersive. The field dependence of the electron mobility was found to exhibit Poole-Frenkel form between 250-380 K. The effects of various ambient gases (N-2, O-2, H2O) to the electron mobility were examined. It is found that O-2 acts as an extrinsic dopant and induces electron traps in bulk Alq(3).