Chemical Vapor Deposition Growth of High Crystallinity Sb2Se3 Nanowire with Strong Anisotropy for Near-Infrared Photodetectors
Chemical Vapor Deposition Growth of High Crystallinity Sb2Se3 Nanowire with Strong Anisotropy for Near-Infrared Photodetectors
复制标题
用于近红外光电探测器的强各向异性高结晶度 Sb2Se3 纳米线的化学气相沉积生长
DOI：
10.1002/smll.201805307
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发表时间：
2019-03-01
期刊：
影响因子：
13.3
通讯作者：
Xu, Hua
中科院分区：
文献类型：
--
作者：
Ma, Zongpeng;Choi, Shouning;Xu, Hua
低维半导体材料由于其独特的结构和优异的性能而引起了人们的广泛关注，这使得它们在电子学和光电子学领域有着广泛的应用前景。本文报道了用化学气相沉积法制备高晶体质量的一维Sb_2Se_3纳米线。所得到的Sb 2 Se 3纳米线具有长径比为2 ~ 200的三棱柱形貌，在六重对称云母衬底上可以实现三种主要的晶格取向。角分辨偏振拉曼光谱测量揭示了Sb 2Se 3纳米线的强各向异性特性，这也是开发来确定其晶体取向。此外，基于Sb 2Se 3 NW的光电探测器表现出从可见光到NIR（400-900 nm）的宽光谱光响应范围。由于Sb 2Se 3 NW的高结晶度，光电探测器获得约405的光电流开/关比，5100 mA W-1的响应度，以及约32和5 ms的快速上升和下降时间，分别。此外，由于Sb_2Se_3 NW的各向异性结构，该器件表现出偏振相关的光响应。Sb 2 Se 3 NW的高结晶度和上级各向异性，结合可控制备，使其在构建多功能光电器件方面具有巨大潜力。
Low-dimensional semiconductors have attracted considerable attention due to their unique structures and remarkable properties, which makes them promising materials for a wide range of applications related to electronics and optoelectronics. Herein, the preparation of 1D Sb2Se3 nanowires (NWs) with high crystal quality via chemical vapor deposition growth is reported. The obtained Sb2Se3 NWs have triangular prism morphology with aspect ratio range from 2 to 200, and three primary lattice orientations can be achieved on the sixfold symmetry mica substrate. Angle-resolved polarized Raman spectroscopy measurement reveals strong anisotropic properties of the Sb2Se3 NWs, which is also developed to identify its crystal orientation. Furthermore, photodetectors based on Sb2Se3 NW exhibit a wide spectral photoresponse range from visible to NIR (400-900 nm). Owing to the high crystallinity of Sb2Se3 NW, the photodetector acquires a photocurrent on/off ratio of about 405, a responsivity of 5100 mA W-1, and fast rise and fall times of about 32 and 5 ms, respectively. Additionally, owing to the anisotropic structure of Sb2Se3 NW, the device exhibits polarization-dependent photoresponse. The high crystallinity and superior anisotropy of Sb2Se3 NW, combined with controllable preparation endows it with great potential for constructing multifunctional optoelectronic devices.