Sub-10 nm imprint lithography and applications
Sub-10 nm imprint lithography and applications
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DOI：
10.1116/1.589752
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发表时间：
1997-11-01
影响因子：
1.4
通讯作者：
Zhuang, L
中科院分区：
文献类型：
--
作者：
Chou, SY;Krauss, PR;Zhuang, L
介绍了压印光刻技术的最新进展、细节和应用。阵列的10 nm的直径和40 nm的周期孔的压印不仅在聚甲基丙烯酸甲酯（PMMA）的硅，但也在PMMA的金基板上。在PMMA中压印的最小孔直径为6 nm。使用剥离将所有PMMA图案转移到金属上。此外，PMMA梅萨的尺寸从45 nm到50 μ m的，在一个单一的压印。此外，压印光刻用于制造硅量子点、线和环形晶体管，其表现出与使用电子束光刻制造的那些相同的行为。最后，压印光刻用于制造具有10 nm特征和400 Gbits/in的纳米光盘。(2)数据密度-比当前的临界尺寸（CD）高出近三个数量级。用硅扫描探针成功地读回了数据。磨损的研究表明，由于在轻敲模式下的超小力，纳米CD和扫描探针在大量扫描后都不会显示出明显的磨损。(C)1997年美国真空学会。
New developments, further details, and applications of imprint lithography are presented. Arrays of 10 nm diameter and 40 nm period holes were imprinted not only in polymethylmethacrylate (PMMA) on silicon, but also in PMMA on gold substrates. The smallest hole diameter imprinted in PMMA is 6 nm. All the PMMA patterns were transferred to a metal using a liftoff. In addition, PMMA mesa's of a size from 45 nm to 50 mu m were obtained in a single imprint. Moreover, imprint lithography was used to fabricate the silicon quantum dot, wire, and ring transistors, which showed the same behavior as those fabricated using electron (e)-beam lithography. Finally, imprint lithography was used to fabricate nanocompact disks with 10 nm features and 400 Gbits/in.(2) data density-near three orders of magnitude higher than current critical dimensions (CDs). A silicon scanning probe was used to read back the data successfully. The study of wear indicates that due to the ultrasmall force in tapping mode, both the nano-CD and the scanning probe will not show noticeable wear after a large number of scans. (C) 1997 American Vacuum Society.