Low frequency noise in 4H silicon carbide
Low frequency noise in 4H silicon carbide
复制标题
4H碳化硅的低频噪声
DOI：
10.1063/1.364007
复制
发表时间：
1997
影响因子：
3.2
通讯作者：
D. Slater
中科院分区：
文献类型：
--
作者：
M. Levinshtein;S. Rumyantsev;J. Palmour;D. Slater
研究了4 H碳化硅多型体材料的体低频噪声。在300-550 K的温度范围内，噪声谱密度S与f−1.5成比例，其中f是测量频率。对于体噪声，已经观察到非常低的噪声水平。在300 K时，胡格常数α在f=20 Hz时小到（2-4）×10−6，在f=1300 Hz时小到α = 5×10−7。在T = 600 K时，局域能级的产生-复合噪声对总低频噪声的贡献最大。该能级的电子俘获截面σ与温度有很强的依赖关系。在620-700 K的温度范围内，σ的温度依赖性可以表示为σ exp（−E1/kT），活化能E1高达2.7 eV。
The bulk low frequency noise has been investigated in the 4H silicon carbide polytype. In the temperature range of 300–550 K the noise spectral density S is proportional to f−1.5, where f is the measurement frequency. A very low noise level has been observed for the bulk noise. At 300 K, the Hooge constant α is as small as (2–4)×10−6 at f=20 Hz and α⩽5×10−7 at f=1300 Hz. At T⩾600 K, the generation-recombination noise of a local level makes the main contribution into the total low frequency noise. The electron capture cross section σ of this level depends very strongly on temperature. In the temperature range of 620–700 K, the temperature dependence of σ can be expressed as σ∼exp(−E1/kT), with an activation energy E1 as high as 2.7 eV.