Microscopic control of 29Si nuclear spins near phosphorus donors in silicon
Microscopic control of 29Si nuclear spins near phosphorus donors in silicon
复制标题
硅中磷供体附近 29Si 核自旋的微观控制
DOI：
10.1103/physrevb.92.121202
复制
发表时间：
2015
期刊：
影响因子：
--
通讯作者：
L. Vlasenko
中科院分区：
文献类型：
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作者：
J. Ja"rvinen;D. Zvezdov;J. Ahokas;S. Sheludyakov;O. Vainio;L. Lehtonen;S. Vasiliev;Y. Fujii;S. Mitsudo;T. Mizusaki;M. Gwak;SangGap Lee;Soonchil Lee;L. Vlasenko
我们证明了在低于1 K的温度和4.6T的高磁场下，对硅中施主附近特定晶格位置的核自旋的有效控制。禁戒的电子-核跃迁的激发导致在电子自旋共振（ESR）线中的良好分辨的空穴和峰的图案。这种模式是由于固体效应使施主附近的核自旋发生动态极化而产生的。DNP的也证明了Overhauser效应，其中允许的ESR跃迁被激发。在这种情况下，大多数与供体具有弱相互作用的远程核被极化，这导致ESR谱中的单个空穴和尖锐的峰对。我们的工作表明，固体效应可以用来初始化施主附近的核自旋量子比特。
We demonstrate an efficient control ofnuclear spins for specific lattice sites neardonors in silicon at temperatures below 1 K and in a high magnetic field of 4.6 T. Excitation of the forbidden electron-nuclear transitions leads to a pattern of well-resolved holes and peaks in the electron spin resonance (ESR) lines of. The pattern originates from dynamic polarization (DNP) of thenuclear spins near the donors via the solid effect. DNP ofis demonstrated also with the Overhauser effect where the allowed ESR transitions are excited. In this case mostly the remotenuclei having weak interaction with the donors are polarized, which results in a single hole and a sharp peak pair in the ESR spectrum. Our work shows that the solid effect can be used for initialization ofnuclear spin qubits near the donors.