Radiation damage induced by 5 keV Si+ ion implantation in strained-Si/Si0.8Ge0.2
Radiation damage induced by 5 keV Si+ ion implantation in strained-Si/Si0.8Ge0.2
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5 keV Si 离子注入应变 Si/Si0.8Ge0.2 引起的辐射损伤
DOI：
10.1016/j.nimb.2004.12.046
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发表时间：
2005
影响因子：
1.3
通讯作者：
M. Ameen
中科院分区：
文献类型：
--
作者：
T. Matsushita;W. Sakai;K. Nakajima;Motofumi Suzuki;K. Kimura;A. Agarwal;H. Gossmann;M. Ameen
利用高分辨率RBS/沟道技术测量了应变Si/Si{sub 0.8}Ge{sub 0.2}和正常Si中超低能离子注入（5 keV Si{sup +}）引起的损伤分布，其深度分辨率优于1 nm。在室温下进行离子注入，注量范围为2 × 10{sup 13}至1 × 10{sup 15}离子/cm{sup 2}。HRBS结果表明，在1 × 10{sup 14}~ 4 × 10{sup 14} ions/cm{sup 2}剂量范围内，应变硅的辐照损伤略大于正常硅，而应变硅和正常硅的非晶宽度基本相同。
The damage distributions induced by ultra low energy ion implantation (5 keV Si{sup +}) in both strained-Si/Si{sub 0.8}Ge{sub 0.2} and normal Si are measured using high-resolution RBS/channeling with a depth resolution better than 1 nm. Ion implantation was performed at room temperature over the fluence range from 2 x 10{sup 13} to 1 x 10{sup 15} ions/cm{sup 2}. Our HRBS results show that the radiation damage induced in the strained Si is slightly larger than that in the normal Si at fluences from 1 x 10{sup 14} to 4 x 10{sup 14} ions/cm{sup 2} while the amorphous width is almost the same in both strained and normal Si.