Temperature-dependent characteristics for the p-type CuO gate HEMT and high-k HfO2 MIS-HEMT on the Si substrates
Temperature-dependent characteristics for the p-type CuO gate HEMT and high-k HfO2 MIS-HEMT on the Si substrates
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DOI：
10.1063/5.0064695
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发表时间：
2021-10
期刊：
影响因子：
1.6
通讯作者：
Yaopeng Zhao;Chong Wang;Xuefeng Zheng;Yunlong He;Xiao-hua Ma;Kai Liu;Ang Li;Y. Hao
中科院分区：
文献类型：
--
作者：
Yaopeng Zhao;Chong Wang;Xuefeng Zheng;Yunlong He;Xiao-hua Ma;Kai Liu;Ang Li;Y. Hao
本文研究了薄势垒Al 0. 45 Ga 0. 55 N/GaN高电子迁移率晶体管（HEMT）、p型CuO栅HEMT和高k HfO 2金属-绝缘体-半导体HEMT（MIS-HEMT）的温度特性。随着温度从20 °C升高到300 °C，HfO 2 MIS-HEMT和CuO栅HEMT的最大跨导分别降低了56.9%和43.2%。当温度达到300 °C时，CuO栅HEMT器件的亚阈值摆幅小于HfO 2器件的亚阈值摆幅。根据20 ~ 300 °C的C-V测试结果，CuO的相对介电常数从18.1增加到47.4，而HfO 2具有相对稳定的介电常数。建立了计算模型，研究了介电常数对漏极电流和跨导的影响。计算结果表明，HfO 2 MIS-HEMT和CuO栅HEMT的最大介电常数分别降低了52.3%和38.9%，与实验结果吻合较好。
This work presents the temperature-dependent characteristics of the thin-barrier Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT), p-type CuO gate HEMT, and high-k HfO2 metal–insulator–semiconductor HEMT (MIS-HEMT). As the temperature rises from 20 to 300 °C, the maximum trans-conductance of the HfO2 MIS-HEMT and CuO gate HEMT reduces by 56.9% and 43.2%, respectively. The sub-threshold swing of the CuO gate HEMT is smaller than that of the HfO2 device when the temperature reaches 300 °C. According to the C–V test results from 20 to 300 °C, the relative dielectric constant of CuO increases from 18.1 to 47.4, whereas HfO2 has a relatively stable dielectric constant. The calculation models are presented to investigate the effect of the dielectric constant on the drain current and the trans-conductance. The calculated results show that the maximum transconductance of the HfO2 MIS-HEMT and CuO gate HEMT decreases by 52.3% and 38.9%, respectively, which is in good agreement with the experimental results.