Two types of structures for the GaAs(001)-c(4×4) surface
Two types of structures for the GaAs(001)-c(4×4) surface
复制标题
GaAs(001)-c(4×4)表面的两种结构
DOI：
10.1063/1.1635078
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发表时间：
2003
影响因子：
4
通讯作者：
N. Koguchi
中科院分区：
文献类型：
--
作者：
A. Ohtake;N. Koguchi
用扫描隧道显微镜、反射差分光谱和X射线光电子能谱研究了As稳定的GaAs(001)-c(4×4)表面的原子结构。我们发现c(4×4)表面分为两个相：α(Ga-As二聚体结构)和β(As-As二聚体结构)。当α相是在AS助熔剂下加热β相时，我们发现从β到α的结构变化是受动力学限制的。
Scanning tunneling microscopy, reflectance difference spectroscopy, and x-ray photoelectron spectroscopy have been used to study the atomic structures of the As-stabilized GaAs(001)-c(4×4) surface. We found that the c(4×4) surfaces are classified into two phases of α (Ga–As dimer structure) and β (As–As dimer structure). While the α phase is obtained by heating the β phase under As fluxes, we found that the structural change from β to α is kinetically-limited.