A New Structure of Ceramic Substrate to Reduce the Critical Electric Field in High Voltage Power Modules
A New Structure of Ceramic Substrate to Reduce the Critical Electric Field in High Voltage Power Modules
复制标题
一种降低高压功率模块临界电场的新型陶瓷基板结构
DOI：
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发表时间：
2022
影响因子：
1.6
通讯作者：
Boya Zhang
中科院分区：
文献类型：
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作者：
Feifei Yan;Laili Wang;Yongmei Gan;Kaixuan Li;Boya Zhang
碳化硅（SiC）的阻断电压水平可以达到10至25 kV，这将显着提高功率模块的功率密度和容量。然而，高电压会感应出高电场，增加局部放电（PD）的风险并威胁绝缘可靠性。本文重点研究功率模块中金属电极、硅胶和陶瓷之间的三相点。充分分析了不同三相点电场的影响因素。进行局部放电实验，结果表明硅胶与陶瓷的界面是绝缘薄弱区。因此，本文证明了弱绝缘区域和高电场在三相点处相遇。为了解决这个问题，提出了一种新的陶瓷基板结构，将界面区域与高电场隔离。同时，新结构可以显着降低高电场增强。
The blocking voltage level of silicon carbide (SiC) can reach 10 to 25 kV, which will significantly increase the power density and capacity of power modules. However, high voltage can induce high electric field, increase the risk of partial discharge (PD) and threaten the insulation reliability. This paper focuses on the triple points between the metal electrode, silicone gel, and ceramic in power modules. The influencing factors of electric field at different triple points are fully analyzed. PD experiments are performed and the results show that interface between silicone gel and ceramic is a weak area of insulation. Therefore, this paper demonstrates that area of weak insulation and high electric field meet at the triple point. To solve this problem, a new structure of ceramic substrate is proposed, which isolates the interface area from high electric field. At the same time, the new structure can significantly reduce the high electric field reinforcement.