Fabrication of planar quantum magnetic disk structure using electron beam lithography, reactive ion etching, and chemical mechanical polishing
Fabrication of planar quantum magnetic disk structure using electron beam lithography, reactive ion etching, and chemical mechanical polishing
复制标题
使用电子束光刻、反应离子蚀刻和化学机械抛光制造平面量子磁盘结构
DOI：
10.1116/1.588303
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发表时间：
1995
影响因子：
1.4
通讯作者：
S. Chou
中科院分区：
文献类型：
--
作者：
P. R. Krauss;S. Chou
已经制造出磁存储密度为65 Gbit/in.2的平面量子磁盘（QMD），比最先进的磁存储密度高出两个数量级以上。平面QMD结构由均匀嵌入SiO2（SiO2）盘中的单畴镍（磁性）纳米柱组成。使用电子束光刻来定义QMD位的尺寸和位置，并且使用反应离子蚀刻来形成SiO2模板。镍电镀用于选择性地将镍存款沉积到模板开口中，并且化学机械抛光用于使表面平坦化。由此产生的QMD由均匀嵌入200 nm厚SiO2中的50 nm直径和100 nm周期的单畴磁柱的高密度阵列组成，表面粗糙度为0.5 nm均方根。每个单畴结构都有一个量化的磁矩，并作为一个比特来存储一个比特的二进制信息。此外，还介绍了一种大规模生产Q…
A planar quantum magnetic disk (QMD) with a magnetic storage density of 65 Gbit/in.2, over two orders of magnitude greater than the state‐of‐the‐art magnetic storage density, has been fabricated. The planar QMD structure consists of single‐domain nickel (magnetic) nanopillars uniformly embedded in a SiO2 (nonmagnetic) disk. Electron beam lithography was used to define the QMD bit’s size and location, and reactive ion etching was used to form an SiO2 template. Nickel electroplating was used to selectively deposit nickel into the template openings, and chemical mechanical polishing was used to planarize the surface. The resulting QMD consists of ultrahigh density arrays of single‐domain magnetic pillars with a 50 nm diameter and 100 nm period uniformly embedded in 200‐nm‐thick SiO2 and with a surface roughness of 0.5 nm root mean square. Each single‐domain structure has a quantized magnetic moment and acts as a single bit to store one bit of binary information. Furthermore, a method for mass production of Q...