Photoluminescence determination of the nitrogen doping concentration in 6H‐SiC
Photoluminescence determination of the nitrogen doping concentration in 6H‐SiC
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光致发光测定6H-SiC中氮掺杂浓度
DOI：
10.1063/1.112706
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
E. Janzén
中科院分区：
文献类型：
--
作者：
A. Henry;O. Kordina;C. Hallin;C. Hemmingsson;E. Janzén
杂质和本征发光线的强度反映了杂质掺杂浓度。介绍了6H-SiC中氮杂质的校正方法。校准适用于从1014到1016 cm−3的n型掺杂的大范围。讨论了激发密度、温度对光致发光实验的影响以及受体相关谱线的观察。
The intensity of impurity and intrinsic luminescence lines reflects the impurity doping concentration. A calibration procedure is presented for the nitrogen impurity in 6H–SiC. The calibration is valid for a large range of n‐type doping from 1014 to 1016 cm−3. Effects of excitation density, temperature during the photoluminescence experiments as well as the observation of acceptor related lines are discussed.