Waveguide-Integrated van der Waals Heterostructure Mid-Infrared Photodetector with High Performance
Waveguide-Integrated van der Waals Heterostructure Mid-Infrared Photodetector with High Performance
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DOI：
10.1021/acsami.2c01094
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发表时间：
2022-04-27
影响因子：
9.5
通讯作者：
Liu, Chang-Hua
中科院分区：
文献类型：
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作者：
Chen, Po-Liang;Chen, Yueyang;Liu, Chang-Hua
将硅光子学的工作波长扩展到中红外 (mid-IR) 波段将显着有利于关键应用领域，包括医疗保健、天文学和化学传感。然而，中红外硅光子学的一个主要障碍是缺乏高速、高响应率和低噪声等效功率 (NEP) 光电探测器。在这里，我们展示了集成在绝缘体上硅 (SOI) 波导上的范德华 (vdW) 异质结构中红外光电探测器。该探测器由垂直堆叠的黑磷（BP）/二碲化钼（MoTe2）组成。我们在 3-4 μm 光谱范围内测量了高响应率（高达 0.85 A/W），这表明波导限制的光可以与顶部的 vdW 异质结构强烈相互作用。此外，波导集成探测器可以高速（>10 MHz）调制，其开关性能表现出优异的稳定性。这些结果与噪声分析一起表明探测器的 NEP 低至 8.2 pW/Hz(1/2)。据报道，硅光子工具箱中的关键缺失部分将使中红外集成光子电路得到广泛采用。
Extending the operation wavelength of silicon photonics to the mid-infrared (mid-IR) band will significantly benefit critical application areas, including health care, astronomy, and chemical sensing. However, a major hurdle for mid-IR silicon photonics has been the lack of high-speed, high-responsivity, and low noise-equivalent power (NEP) photodetectors. Here, we demonstrate a van der Waals (vdW) heterostructure mid-IR photodetector integrated on a silicon-on-insulator (SOI) waveguide. The detector is composed of vertically stacked black phosphorus (BP)/molybdenum ditelluride (MoTe2). We measured high responsivity (up to 0.85 A/W) over a 3-4 mu m spectral range, indicating that waveguide-confined light could strongly interact with vdW heterostructures on top. In addition, the waveguide- integrated detector could be modulated at high speed (>10 MHz) and its switching performance shows excellent stability. These results, together with the noise analysis, indicate that the NEP of the detector is as low as 8.2 pW/Hz(1/2). This reported critical missing piece in the silicon photonic toolbox will enable the wide-spread adoption of mid-IR integrated photonic circuits.