Heating mechanisms of LDMOS and LIGBT in ultrathin SOI
Heating mechanisms of LDMOS and LIGBT in ultrathin SOI
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DOI：
10.1109/55.622514
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发表时间：
1997-09
影响因子：
4.9
通讯作者：
Ying-Keung Leung;A. Paul;K. Goodson;J. Plummer;S.S. Wong
中科院分区：
文献类型：
--
作者：
Ying-Keung Leung;A. Paul;K. Goodson;J. Plummer;S.S. Wong
由于绝缘体上硅（SOI）功率器件中的自加热引起的温度升高可能导致性能退化和可靠性问题。本文研究了线性渐变SOI LDMOS和LIGBT器件的热产生机理和空间分布。虽然焦耳加热在LDMOS器件中占主导地位，但p阱漂移区结处的空穴收集对LIGBT的加热有很大贡献。而且，焦耳和复合加热的存在使得LIGBT中的加热分布更均匀。这些效应联合收割机在LIGBT中产生了比LDMOS器件中更均匀且平均更低的温度升高。
Temperature rises due to self-heating in silicon-on-insulator (SOI) power devices may lead to performance degradation and reliability problems. This letter investigates the mechanisms and spatial distribution of heat generation in linearly graded SOI LDMOS and LIGBT devices. While Joule heating dominates in LDMOS devices, hole collection at the p-well-drift region junction contributes strongly to the heating of LIGBT's. Also, the presence of both Joule and recombination heating makes the heating profile more uniform in LIGBT's. These effects combine to yield a temperature rise in LIGBT's that is more uniform and lower on average than that in LDMOS devices.