Ion trajectory distortion and profile tilt by surface charging in plasma etching
Ion trajectory distortion and profile tilt by surface charging in plasma etching
复制标题
等离子蚀刻中表面充电引起的离子轨迹畸变和轮廓倾斜
DOI：
10.1063/1.111864
复制
发表时间：
1994
影响因子：
4
通讯作者：
J. Mcvittie
中科院分区：
文献类型：
--
作者：
S. Murakawa;S. Fang;J. Mcvittie
利用扫描电子显微图和等离子体电位测量研究了非均匀等离子体中硅刻蚀过程中表面电荷对刻蚀轮廓的影响。利用离子透镜模拟器计算了表面充电引起的离子轨迹畸变。当使用绝缘掩膜（如光刻胶或二氧化硅）时，在大型蚀刻区域附近的孔和沟槽中发现了蚀刻轮廓的倾斜。离子轨迹计算表明，这种轮廓倾斜是由带电掩膜表面与电接地硅衬底之间的电位差引起的局部电场引起的。这一剖面结果与栅极氧化物损伤结果吻合良好，表面充电也成功地解释了这一结果。
Surface charging effects on etching profiles during silicon etching in a nonuniform plasma were investigated by scanning electron micrographs and plasma potential measurements. The distortion in ion trajectories caused by the surface charging was calculated by an ion lens simulator. A tilt in the etching profile was found in holes and trenches near a large etched area when an insulating mask such as photoresist or silicon dioxide was used. Ion trajectory calculations showed that this profile tilt was caused by the local electric field resulting from the potential difference between the charged mask surface and the electrically grounded silicon substrate. This profile result agrees well with gate oxide damage results which were also successfully explained by surface charging.