Exploring oxygen in graphene chemical vapor deposition synthesis
Exploring oxygen in graphene chemical vapor deposition synthesis
复制标题
探索石墨烯化学气相沉积合成中的氧气
DOI：
10.1039/c7nr00188f
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发表时间：
2017-03-21
期刊：
影响因子：
6.7
通讯作者：
Xu, Mingsheng
中科院分区：
文献类型：
--
作者：
Liang, Tao;Luan, Chunyan;Xu, Mingsheng
石墨烯的实际应用需要其具有受控手段的可重复生产。特别地，通过在金属上化学气相沉积的石墨烯合成已被证明是以低成本生产大尺寸和高质量石墨烯膜的有前途的方法。了解合成过程中的反应机理对于工艺和产品的可控性至关重要。关于石墨烯生产中金属、石墨烯和氢之间的相互作用已经有了大量的研究，导致可控石墨烯合成的重大进展。最近，人们发现氧在石墨烯合成的每个步骤中都起着关键作用，特别是在Cu上。考虑到氧气，人们可以解释以前报道的在类似条件下的不同实验结果，并可以将其作为另一个强大的工具，可以帮助调节合成过程。本文对氧在石墨烯合成中的作用的初步发现进行了总结和讨论，并将其分为四个方面，对应于石墨烯合成的基本步骤。氧还可以进一步促进石墨烯合成，以实现开发具有确定层数和缺陷的晶片级单晶的最终目标。
Graphene's practical applications require its reproducible production with controlled means. In particular, graphene synthesis by chemical vapor deposition on metals has been shown to be a promising way to produce large-size and high-quality graphene film at low cost. Understanding the reaction mechanisms during the synthesis process is vital for process and product controllability. There have been a great deal of studies regarding the mutual interplays between the metal, graphene, and hydrogen in graphene production, leading to significant advances in controllable graphene synthesis. Recently, oxygen has been found to play a key role in each step of graphene synthesis, especially on Cu. Taking oxygen into consideration, one can explain the divergent experimental results under similar conditions reported before and can grasp it as another powerful tool that can help to regulate the synthesis processes. The primary discoveries of the function of oxygen in graphene synthesis are summarized and discussed herein, divided into four aspects, corresponding to the elementary steps in graphene synthesis. Oxygen may also further promote graphene synthesis toward the final goal of developing wafer-scale single crystals with definite layer numbers and defects.