Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows
Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows
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DOI：
10.1016/j.jcrysgro.2003.09.007
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发表时间：
2004-01
影响因子：
1.8
通讯作者：
Jianping Liu;Baoshun Zhang;M. Wu;Dabing Li;Jianya Zhang;R. Jin;J. Zhu;Jing-Qing Chen;Jingxia Wang;Y. Wang;Huaiwen Yang
中科院分区：
文献类型：
--
作者：
Jianping Liu;Baoshun Zhang;M. Wu;Dabing Li;Jianya Zhang;R. Jin;J. Zhu;Jing-Qing Chen;Jingxia Wang;Y. Wang;Huaiwen Yang
