Use of self-assembled monolayers for selective metal removal and ultrathin gate dielectrics in MoS2 field-effect transistors
Use of self-assembled monolayers for selective metal removal and ultrathin gate dielectrics in MoS2 field-effect transistors
复制标题
DOI：
10.7567/jjap.56.04cp10
复制
发表时间：
2017-03
影响因子：
1.5
通讯作者：
W. Du;T. Kawanago;S. Oda
中科院分区：
文献类型：
--
作者：
W. Du;T. Kawanago;S. Oda
利用十八烷基膦酸（ODPA）基自组装单层（SAM）的各种功能，展示了一种简单快速的制备多层二硫化钼（MoS2）场效应晶体管（fet）的方法。SAM既可用于图案中的选择性金属去除，以简化制造过程，也可作为器件中的超薄栅极介电体。实验结果表明，MoS2场效应管具有低栅极漏电流和小磁滞的低压工作特性。此外，选择性金属去除可以有效地缩小栅极和接触电极之间的间距，从而改善器件特性。这种方法也使得转移更薄、更小的二硫化钼薄片成为可能。这项研究表明，在功能性电子器件的制造中，SAM具有有趣的应用前景。
We demonstrate a simple and rapid method for the fabrication of multilayer molybdenum disulfide (MoS2) field-effect transistors (FETs) by exploiting various functions of an octadecylphosphonic acid (ODPA)-based self-assembled monolayer (SAM). The SAM is used both for selective metal removal in patterning to simplify the fabrication process and as an ultrathin gate dielectrics in the device. The low voltage operation of the MoS2 FETs was observed with a low gate leakage current and small hysteresis. In addition, selective metal removal can effectively narrow the spacing between the gate and contact electrodes, resulting in improved device characteristics. This approach also makes it possible to transfer thinner and smaller MoS2 flakes. This study suggests intriguing applications of the SAM for the fabrication of functional electronic devices.