High-field properties of carrier transport in bulk wurtzite GaN: A Monte Carlo perspective
High-field properties of carrier transport in bulk wurtzite GaN: A Monte Carlo perspective
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DOI：
10.1063/1.2828003
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发表时间：
2008-01
影响因子：
3.2
通讯作者：
Shiyu Chen;Gang Wang
中科院分区：
文献类型：
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作者：
Shiyu Chen;Gang Wang
采用系综蒙特卡罗（EMC）方法研究了纤锌矿相GaN体材料中电子和空穴在高电场作用下的输运特性。在我们的EMC模拟中，碰撞电离过程，这是很少研究，由于缺乏实验数据，包括在内。碰撞电离被视为一种附加散射机制，碰撞电离率由Keldysh公式描述，公式中的参数由模拟结果与数值计算结果拟合确定。这样的处理使得它方便地模拟由电子或空穴与EMC方法相比，在GaN中的载流子输运性质的先前研究的高场发起的碰撞电离。在高达1 MV/cm的外加电场下的载流子的稳态特性的介绍和分析。特别是对碰撞电离过程作了进一步的研究和讨论。据了解，T…
The transport properties of both electron and hole in bulk wurtzite phase GaN in the high electric field domain are presented by using an ensemble Monte Carlo (EMC) method. In our EMC simulation, the impact ionization process, which is seldom studied due to the lack of experimental data, is included. The impact ionization is treated as an additional scattering mechanism, and the impact ionization rate is described by the Keldysh formula, with the parameters in the formula determined by fitting the simulation results to the numerical calculation results. Such a treatment makes it convenient to simulate the impact ionization initiated by either an electron or hole with the EMC method compared to the previous study of carrier transport properties in GaN up to the high field. Steady-state properties of carriers under an applied electric field up to 1 MV/cm are presented and analyzed. Particularly, the impact ionization process here is further studied and detailed discussions are also given. It is found that t...