Rapid solidification processes of semiconductors from highly undercooled melts
Rapid solidification processes of semiconductors from highly undercooled melts
复制标题
高度过冷熔体的半导体快速凝固过程
DOI：
10.1016/s0921-5093(00)01494-5
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发表时间：
2001
期刊：
影响因子：
6.4
通讯作者：
K. Kuribayashi
中科院分区：
文献类型：
--
作者：
T. Aoyama;K. Kuribayashi
采用电磁悬浮器和激光加热装置对高纯Si和Ge进行了过冷实验。通过两个光电二极管测量了它们的晶体生长速度作为过冷度的函数，并通过高速摄像机观察了固液界面的外观。并将计算结果与基于枝晶生长理论的预测值进行了比较。Si和Ge的生长行为被发现分为三类的横向，连续，连续形核在低，中，高过冷度值，分别在测量范围内的过冷度。Ge的分类转变温度分别为85和170K。研究了过冷液相凝固试样的显微组织，观察到了连续形核的晶粒细化现象。
Highly pure Si and Ge were undercooled by an electromagnetic levitator combined with a laser heating unit. Their crystal growth velocities were measured as a function of undercooling by means of two photodiodes and the appearance of the solid–liquid interface was observed by high-speed video camera. The result was compared with the predicted value based on the dendrite growth theory. The growth behaviors of Si and Ge were found to be classified into three categories of lateral, continuous, and successive nucleation at low, moderate, and high undercooling values, respectively in the measured range of undercooling. The transition temperatures for the classifications are 85 and 170K for Ge. The microstructures of samples solidified from undercooled liquid were investigated and grain refinement showing the successive nucleation is observed.