Enhanced nitrogen diffusion in 4H-SiC
Enhanced nitrogen diffusion in 4H-SiC
复制标题
4H-SiC 中增强的氮扩散
DOI：
10.1063/1.1432451
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发表时间：
2002
影响因子：
4
通讯作者：
C. P. Burrows
中科院分区：
文献类型：
--
作者：
G. J. Phelps;N. Wright;E. G. Chester;C. M. Johnson;A. O'Neill;S. Ortolland;A. Horsfall;K. Vassilevski;R. Gwilliam;P. Coleman;C. P. Burrows
实验证明了硼(B)增强氮(N)在离子注入4H碳化硅（4H- sic）中的扩散，当氮注入物在现有的硼p型井中共掺杂时。当样品在1600℃退火时，共注入的氮随着时间的推移不断扩散，硼p阱注入剖面几乎没有移动。在1600℃时，硼中氮的有效扩散系数被确定为比单掺杂氮植入物的扩散系数至少大60倍。
Experimental evidence is given for boron (B) enhanced diffusion of nitrogen (N) in ion-implanted 4H silicon carbide (4H-SiC), when a nitrogen implant is co-doped within an existing boron p-type well. The co-implanted nitrogen is shown to diffuse continuously with time when samples are annealed at 1600 °C—with little movement of the boron p-well implant profile. An effective nitrogen in boron diffusivity at 1600 °C is determined to be at least 60 times larger than that of a mono-doped nitrogen implant.