Switching performance comparison of the SiC JFET and the SiC JFET/Si MOSFET cascode configuration
Switching performance comparison of the SiC JFET and the SiC JFET/Si MOSFET cascode configuration
复制标题
DOI：
10.1109/ecce.2013.6646739
复制
发表时间：
2013-10
期刊：
影响因子：
--
通讯作者：
Alberto Rodríguez;Marcos Fernandez;M. Hernando;D. G. Lamar;M. Arias;J. Sebastián
中科院分区：
文献类型：
--
作者：
Alberto Rodríguez;Marcos Fernandez;M. Hernando;D. G. Lamar;M. Arias;J. Sebastián
碳化硅（SiC）器件由于其制造工艺更加成熟而在市场上变得越来越可用。它们相对于硅（Si）器件具有许多优点，例如，更高的阻断能力、更低的导通电压降和更快的转换，这使得它们更适合于高功率和高频转换器。本文的目的是研究的两种配置更广泛地研究在文献中使用SiC器件的开关行为：常开型SiC JFET和共源共栅使用常开型SiC JFET和低压Si MOSFET。关于这两种配置的导通和关断损耗的比较进行了详细说明，并与实验效率的结果进行了验证，在升压转换器中获得的连续导通模式（CCM）和不连续导通模式（DCM）。在此基础上，重点研究了共源共栅结构的开关特性，分析了其低压MOSFET的作用，并对不同的硅器件进行了比较。所进行的研究将证实，JFET的整体开关损耗较低，使其更适合在转换器的全局效率方面在CCM中工作。然而，共源共栅放大器的最低关断损耗突出表明，当在主开关导通时实现ZVS时，该器件是DCM的最佳选择。最后，所有的理论分析结果都通过一个600 W的升压变换器实验得到了验证。
Silicon Carbide (SiC) devices are becoming increasingly available in the market due to the fact that its manufacturing process is more mature. Many are their advantages with respect to the silicon (Si) devices as, for example, higher blocking capability, lower conduction voltage drop and faster transitions, which makes them more suitable for high-power and high-frequency converters. The purpose of this paper is to study the switching behavior of the two configurations more-widely studied in the literature using SiC devices: the normally-on SiC JFET and the cascode using a normally-on SiC JFET and a low-voltage Si MOSFET. A comparison regarding the turn-on and turn-off losses of both configurations is detailed and the results are verified with the experimental efficiency results obtained in a boost converter operating in both Continuous Conduction Mode (CCM) and Discontinuous Conduction Mode (DCM). Furthermore, a special attention will be focused on the switching behavior of the cascode configuration and the effect of its low-voltage MOSFET is analyzed and different Si devices are compared. The study carried out will confirm that the overall switching losses of the JFET are lower, making it more suitable to operate in CCM in terms of the global efficiency of the converter. Nevertheless, the lowest turn-off losses of the cascode highlight this device as the most appropriate one for DCM when ZVS is achieved at the turn-on of the main switch. Finally, all theoretical results have been verified by an experimental 600W boost converter.