Tungsten dichalcogenide WS 2 x Se 2-2 x films via single source precursor low-pressure CVD and their (thermo-)electric properties
Tungsten dichalcogenide WS 2 x Se 2-2 x films via single source precursor low-pressure CVD and their (thermo-)electric properties
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通过单源前驱体低压 CVD 制备的二硫钨 WS 2 x Se 2-2 x 薄膜及其（热）电性能
DOI：
10.1039/d3ta00466j
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发表时间：
2023
影响因子：
11.9
通讯作者：
Sethi V
中科院分区：
文献类型：
--
作者：
Sethi V
半导体过渡金属二硫族化合物由于其可调谐的电子带隙而作为石墨烯的潜在替代品而受到越来越多的关注。在本研究中，我们采用单源前驱体[WECl4(E ' nbu2)] (E = S或Se； E ' = S或Se)，通过低压化学气相沉积，制备了化学计量WS2xSe2−2x（0≤x≤1）二元和三元薄膜。通过掠射x射线衍射、扫描电子显微镜、x射线光电子能谱和拉曼光谱对沉积物进行了成分和结构表征，确认了相纯度和化学计量学。通过霍尔测量的电特性揭示了这些薄膜的高导电性。如此高的电导率可能与薄膜中的Se和S空位有关，并且可以通过退火过程来调节。利用变温Seebeck测量对WS2xSe2−2x的热电性能进行了表征，结果表明，在553k下，WS2薄膜的峰值功率因数为6 μW m−1 K−2。
Semiconducting transition metal dichalcogenides have gained increased interest as potential alternatives to graphene due to their tunable electronic bandgaps. In this study, we present the deposition of stoichiometric WS2xSe2−2x (0 ≤ x ≤ 1) binary and ternary thin films using the single source precursors, [WECl4(E′nBu2)] (E = S or Se; E′ = S or Se), via low-pressure chemical vapour deposition. Compositional and structural characterisations of the deposits have been performed by grazing-incidence X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy, confirming the phase purity and stoichiometry. Electrical characterisation via Hall measurements reveals high electrical conductivities for those films. Such high conductivity is likely related to Se and S vacancies in the films and can be tuned through an annealing process. The thermoelectric capabilities of the WS2xSe2−2x have been characterised with the use of variable-temperature Seebeck measurements, showing a peak power factor of 6 μW m−1 K−2 for the as-deposited WS2 film at 553 K.