A novel CuxSiyO resistive memory in logic technology with excellent data retention and resistance distribution for embedded applications
A novel CuxSiyO resistive memory in logic technology with excellent data retention and resistance distribution for embedded applications
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采用逻辑技术的新型 CuxSiyO 电阻式存储器，为嵌入式应用提供出色的数据保留和电阻分布
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
M. Chi
中科院分区：
文献类型：
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作者：
M. Wang;W. Luo;Y. L. Wang;L. M. Yang;Wenjie Zhu;P. Zhou;J. H. Yang;X. Gong;Y. Y. Lin;R. Huang;S. Song;Q. Zhou;H. Wu;J. Wu;M. Chi
新的Cu <f> X </inf> si </inf y </inf>电阻内存，它与掺杂的cu doped Sio <f> 2 </inf>或Cuxo二元氧化物不同，已成功地集成在标准中逻辑技术首次是关键突破性的是，数据保留（10年@ 150°C），阻力分布（50倍窗口@ 125°C）和灾难从1MB上提高了灾难的改善测试芯片。cu </inf> si </inf> y </inf> o的活化能量的增加是cu <f> x </inf> o的5倍对于高密度和低成本的非挥发性内存（NVM）应用程序，解决方案是有希望的。
A new Cu<inf>x</inf>Si<inf>y</inf>O resistive memory, which is different from Cu-doped SiO<inf>2</inf> or CuxO binary oxide, is integrated successfully in standard logic technology for the first time. Key breakthrough is that data retention (10 years@ 150°C), resistance distribution (with 50x window@125 °C ) and disturbance immunity significantly improved with integration simplicity advantage, as demonstrated on a 1Mb test chip. The activation energy of Cu vacancy migration in Cu<inf>x</inf>Si<inf>y</inf>O increases by 5 times than that in Cu<inf>x</inf>O, giving rise to the great performance improvement. The solution is promising for both high density and low cost embedded nonvolatile memory (NVM) applications.