Response of a single trap to AC negative Bias Temperature stress
Response of a single trap to AC negative Bias Temperature stress
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单个陷阱对交流负偏置温度应力的响应
DOI：
10.1109/irps.2011.5784501
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
G. Groeseneken
中科院分区：
文献类型：
--
作者：
M. Toledano;B. Kaczer;P. Roussel;T. Grasser;G. Wirth;J. Franco;C. Vrancken;N. Horiguchi;G. Groeseneken
我们通过时间相关缺陷光谱研究了在交流偏置温度不稳定性 (BTI) 应力条件下单栅极氧化陷阱的特性。基于一级动力学开发了一种预测交流应力后单个陷阱占据的理论，并通过实验数据进行了验证。所开发的理论可用于开发电路模拟器并预测随时间变化的变化。
We study the properties of a single gate oxide trap subjected to AC Bias Temperature Instability (BTI) stress conditions by means of Time Dependent Defect Spectroscopy. A theory for predicting the occupancy of a single trap after AC stress is developed based on first order kinetics and verified on experimental data. The developed theory can be used to develop circuit simulators and predict time dependent variability.