Programming Semiconductor Nanowire Composition with Sub-100 nm Resolution via the Geode Process
Programming Semiconductor Nanowire Composition with Sub-100 nm Resolution via the Geode Process
复制标题
通过 Geode 工艺对半导体纳米线组合物进行编程，分辨率低于 100 nm
DOI：
10.1021/acs.nanolett.1c02545
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发表时间：
2022
期刊：
影响因子：
10.8
通讯作者：
Filler, Michael A.
中科院分区：
文献类型：
--
作者：
Mujica, Maritza;Mohabir, Amar;Shetty, Pralav P.;Cline, Wesley R.;Aziz, Daniel;McDowell, Matthew T.;Breedveld, Victor;Behrens, Sven Holger;Filler, Michael A.
我们通过 Geode 工艺演示了单晶 i-Si、i-Si/n-Si 和 SixGe1-x/SiyGe1-yn 纳米线的气-液-固生长。通过在微胶囊粉末的大内表面积上实现纳米线生长，Geode 工艺提高了半导体纳米线制造的可扩展性，同时保持了纳米级可编程性。在这里，我们表明，微胶囊壁引入的热量和质量传输限制可以忽略不计，从而可以对微胶囊内部和传统平面基板上生长的纳米线进行相同程度的成分控制。高效的热量和质量传输还可以最大限度地减少在不同直径和壁厚的微胶囊中生长的纳米线的结构变化。展示了包含至少 16 个片段且片段长度低于 75 nm 的纳米线。
We demonstrate the vapor–liquid–solid growth of single-crystalline i-Si, i-Si/n-Si, and SixGe1–x/SiyGe1–ynanowires via the Geode process. By enabling nanowire growth on the large internal surface area of a microcapsule powder, the Geode process improves the scalability of semiconductor nanowire manufacturing while maintaining nanoscale programmability. Here, we show that heat and mass transport limitations introduced by the microcapsule wall are negligible, enabling the same degree of compositional control for nanowires grown inside microcapsules and on conventional flat substrates. Efficient heat and mass transport also minimize the structural variations of nanowires grown in microcapsules with different diameters and wall thicknesses. Nanowires containing at least 16 segments and segment lengths below 75 nm are demonstrated.