Characterization of high fluence irradiations on advanced triple junction solar cells

Characterization of high fluence irradiations on advanced triple junction solar cells
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DOI：
10.1109/pvsc.2013.6745053
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发表时间：
2013-06
期刊：
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)
影响因子：
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通讯作者：
S. Maximenko;S. Messenger;R. Hoheisel;D. Scheiman;M. González;J. Lorentzen;P. Jenkins;R. Walters
S. Maximenko;S. Messenger;R. Hoheisel;D. Scheiman;M. González;J. Lorentzen;P. Jenkins;R. Walters
中科院分区：
其他
文献类型：
--
作者：
S. Maximenko;S. Messenger;R. Hoheisel;D. Scheiman;M. González;J. Lorentzen;P. Jenkins;R. Walters

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报道了利用扫描电子显微镜（SEM）的阴极发光（CL）成像/光谱和电子束感生电流（EBIC）模式表征辐照后的InGaP 2/GaAs/Ge多结（MJ）太阳电池。应用这些技术来验证辐射损伤对单片三结结构中每个子电池的光电特性的影响，并将它们与照射（AM 0，1个太阳，25°C）电流-电压（IV）和量子效率（QE）特性相关联。
Reported is the characterization of irradiated InGaP2/GaAs/Ge multijunction (MJ) solar cells using the cathodoluminescence (CL) imaging/spectroscopy and electron beam induced current (EBIC) modes of scanning electron microscopy (SEM). These techniques were applied to verify the influence of radiation damage on the optoelectronic properties of each subcell in the monolithic triple junction structure and correlate them with the illuminated (AM0, 1 sun, 25°C) current-voltage (IV) and quantum efficiency (QE) characteristics.