Ultralow reverse leakage current in AlGaN/GaN lateral Schottky barrier diodes grown on bulk GaN substrate
Ultralow reverse leakage current in AlGaN/GaN lateral Schottky barrier diodes grown on bulk GaN substrate
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在块状 GaN 衬底上生长的 AlGaN/GaN 横向肖特基势垒二极管的超低反向漏电流
DOI：
10.7567/apex.9.031001
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发表时间：
2016
影响因子：
2.3
通讯作者：
K. Lau
中科院分区：
文献类型：
--
作者：
Xing Lu;Chao Liu;Huaxing Jiang;Xinbo Zou;Anping Zhang;K. Lau
报道了在块状GaN衬底上生长的AlGaN/GaN异质结横向肖特基势垒二极管(L-SBDS)的研究。在没有任何额外处理的情况下，L-SBDS的反向漏电流低于10−6A/cm~2，比蓝宝石衬底上的参考器件低4个数量级以上。这种优异的性能归功于同质外延异质结构的高结晶质量。比较还表明，在体相GaN衬底上生长的同质外延L-SBD中没有高密度陷阱态是实现低反向漏电流的关键。
We report on a study of AlGaN/GaN heterostructure lateral Schottky barrier diodes (L-SBDs) grown on a bulk GaN substrate. The L-SBDs exhibited an ultralow reverse leakage current below 10−6 A/cm2 without employing any extra treatments, which was over 4 orders of magnitude lower than that of a reference device on a sapphire substrate. The superior performance was attributed to the high crystalline quality of the heterostructure achieved by homoepitaxy. The comparison also revealed that the absence of high-density trap states in the homoepitaxial L-SBD grown on the bulk GaN substrate played a key role in achieving a low reverse leakage current.