Conductance Spectroscopy Study on Interface Electronic States of HfO2/Si Structures: Comparison with Interface Dipole
Conductance Spectroscopy Study on Interface Electronic States of HfO2/Si Structures: Comparison with Interface Dipole
复制标题
DOI：
10.1143/apex.2.035502
复制
发表时间：
2009-02
影响因子：
2.3
通讯作者：
N. Miyata;Y. Abe;T. Yasuda
中科院分区：
文献类型：
--
作者：
N. Miyata;Y. Abe;T. Yasuda
We examined the electronic-state characteristics of direct-contact HfO2/Si interfaces to study the origin of interface dipole. The interface state densities, time constants, and broadening parameters extracted by ac-conductance spectroscopy did not reveal any correlation with the flat-band voltage shifts caused by the interface dipole. We propose that the dipole is not associated with interface-state-related charge transfer, but possibly with chemical-bonding polarization.
