Intercalation of graphene on SiC(0001) via ion implantation
Intercalation of graphene on SiC(0001) via ion implantation
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DOI：
10.1103/physrevb.94.085431
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发表时间：
2016-08-31
影响因子：
3.7
通讯作者：
Benia, Hadj M.
中科院分区：
文献类型：
--
作者：
Stoehr, Alexander;Forti, Stiven;Benia, Hadj M.
基于石墨烯技术的电子设备正在迅速流行，在纳米级设计石墨烯特性的能力比以往任何时候都更加不可或缺。在这里，我们提出了一个石墨烯功能化SiC（0001），铺平了道路走向复杂的石墨烯电子芯片的制造过程。该过程依赖于众所周知的离子注入技术。工作原理的效率通过在具有Bi原子的SiC（0001）上插入外延石墨烯层来证明，这在标准程序中是不可能的。对所获得的石墨烯系统的研究显示，除了存在残余结构缺陷之外，没有理论预期的明显的自旋轨道耦合增强。我们的石墨烯/SiC（0001）插层过程提出了离子束光刻纳米结构化和功能化所需的石墨烯芯片。
Electronic devices based on graphene technology are catching on rapidly and the ability to engineer graphene properties at the nanoscale is becoming, more than ever, indispensable. Here, we present a procedure of graphene functionalization on SiC(0001) that paves the way towards the fabrication of complex graphene electronic chips. The procedure resides on the well-known ion-implantation technique. The efficiency of the working principle is demonstrated by the intercalation of the epitaxial graphene layer on SiC(0001) with Bi atoms, which was not possible following standard procedures. The investigation of the obtained graphene system reveals no clear spin-orbit coupling enhancement expected by theory in addition to the presence of residual structural defects. Our graphene/SiC(0001) intercalation procedure puts forward the ion-beam lithography to nanostructure and functionalize desired graphene chips.